CONDUCTIVE MGO UNDER HIGH PRESSURE

被引:7
作者
KAWAI, N [1 ]
NISHIYAMA, A [1 ]
机构
[1] OSAKA UNIV, FAC ENGN SCI, DEPT PHYS, TOYONAKA, OSAKA, JAPAN
来源
PROCEEDINGS OF THE JAPAN ACADEMY | 1974年 / 50卷 / 08期
关键词
D O I
10.2183/pjab1945.50.634
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
引用
收藏
页码:634 / 635
页数:2
相关论文
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Bernal JD, 1936, OBSERVATORY, V59, P268
[2]   CONDUCTIVE SIO2 UNDER HIGH-PRESSURE [J].
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PROCEEDINGS OF THE JAPAN ACADEMY, 1974, 50 (01) :72-75
[3]   NEW DEVICE FOR PRESSURE-VESSELS [J].
KAWAI, N ;
TOGAYA, M ;
ONODERA, A .
PROCEEDINGS OF THE JAPAN ACADEMY, 1973, 49 (08) :623-626
[4]   SEMICONDUCTOR-TO-METAL TRANSITION IN GAP UNDER HIGH-PRESSURE [J].
ONODERA, A ;
KAWAI, N ;
ISHIZAKI, K ;
SPAIN, IL .
SOLID STATE COMMUNICATIONS, 1974, 14 (09) :803-806
[5]  
RAMSEY WH, 1949, MONTHLY NOTICES RO S, V5, P409