SIMPLE PHENOMENOLOGICAL MODELING OF TRANSITION-REGION CAPACITANCE OF FORWARD-BIASED P-N-JUNCTION DIODES AND TRANSISTOR DIODES

被引：18

作者：

LINDHOLM, FA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 11期

关键词：

D O I：

10.1063/1.330133

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：7606 / 7608

页数：3

共 17 条

[1]

[Anonymous], 1988, STATIC DYNAMIC ELECT

[2] PHENOMENOLOGY AND LOGICAL REASONING IN INTRODUCTORY PHYSICS COURSES [J].

ARONS, AB .

AMERICAN JOURNAL OF PHYSICS, 1982, 50 (01) :13-20

[3] A BOUNDARY TECHNIQUE FOR CALCULATION OF DISTRIBUTED RESISTANCE [J].

CHAWLA, BR ;

GUMMEL, HK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (10) :915-&

[4] ACTIVE-DEVICE CAPACITANCES [J].

CHERRY, EM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (12) :1166-+

[5] AN ACCURATE NUMERICAL STEADY-STATE 1-DIMENSIONAL SOLUTION OF P-N JUNCTION [J].

DEMARI, A .

SOLID-STATE ELECTRONICS, 1968, 11 (01) :33-+

[6] ANALYTIC APPROXIMATIONS FOR FERMI ENERGY OF AN IDEAL FERMI GAS [J].

JOYCE, WB ;

DIXON, RW .

APPLIED PHYSICS LETTERS, 1977, 31 (05) :354-356

[7] CONDUCTIVITY AND HALL EFFECT IN THE INTRINSIC RANGE OF GERMANIUM [J].

MORIN, FJ ;

MAITA, JP .

PHYSICAL REVIEW, 1954, 94 (06) :1525-1529

[8] DIFFUSION LENGTH AND LIFETIME DETERMINATION IN P-N-JUNCTION SOLAR-CELLS AND DIODES BY FORWARD-BIASED CAPACITANCE MEASUREMENTS [J].

NEUGROSCHEL, A ;

CHEN, PJ ;

PAO, SC ;

LINDHOLM, FA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (04) :485-490

[9] EXPERIMENTAL-DETERMINATION OF STORED CHARGE AND EFFECTIVE LIFETIME IN EMITTER OF JUNCTION TRANSISTORS [J].

NEUGROSCHEL, A ;

SAH, CT ;

LINDHOLM, FA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (12) :1362-1365

[10] WAVE-NUMBER-DEPENDENT DIELECTRIC FUNCTION OF SEMICONDUCTORS [J].

PENN, DR .

PHYSICAL REVIEW, 1962, 128 (05) :2093-+

← 1 2 →