EFFECT OF W-DOPING ON THE GROWTH OF TIC CRYSTAL BY THE FLOATING ZONE METHOD

被引：12

作者：

OTANI, S

TANAKA, T

ISHIZAWA, Y

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 92卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(88)90020-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：359 / 363

页数：5

共 11 条

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[4] PREPARATION OF TIC SINGLE-CRYSTAL FROM SELF-COMBUSTION ROD BY FLOATING ZONE METHOD [J].

OTANI, S ;

TANAKA, T ;

ISHIZAWA, Y .

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[5] TEMPERATURE DISTRIBUTION IN CRYSTAL RODS WITH HIGH MELTING-POINTS PREPARED BY A RF FLOATING ZONE TECHNIQUE [J].

OTANI, S ;

TANAKA, T ;

ISHIZAWA, Y .

JOURNAL OF CRYSTAL GROWTH, 1984, 66 (02) :419-425

[6] GROWTH OF SINGLE-CRYSTALS OF THE IVA GROUP TRANSITION-METAL CARBIDES BY A FLOATING ZONE TECHNIQUE [J].

OTANI, S ;

TANAKA, T .

JOURNAL OF THE LESS-COMMON METALS, 1981, 82 (1-2) :63-68

[7] PREPARATION OF TICX SINGLE-CRYSTALS WITH MAXIMUM CARBON CONTENT BY A FLOATING ZONE TECHNIQUE [J].

OTANI, S ;

HONMA, S ;

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ISHIZAWA, Y .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (01) :1-7

[8] PREPARATION OF ZRCX SINGLE-CRYSTALS WITH CONSTANT COMPOSITIONS BY FLOATING ZONE TECHNIQUE [J].

OTANI, S ;

TANAKA, T ;

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JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) :164-170

[9] TEMPERATURE DISTRIBUTION IN TIC CRYSTAL ROD PREPARED BY RF FLOATING ZONE TECHNIQUE [J].

OTANI, S ;

TANAKA, T ;

ISHIZAWA, Y .

JOURNAL OF THE LESS-COMMON METALS, 1985, 113 (02) :205-212

[10]

OTANI S, IN PRESS J CRYSTAL G

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