PRELIMINARY SOFT-X-RAY STUDIES OF BETA-SIC

被引:30
作者
SHEK, ML
MIYANO, KE
DONG, QY
CALLCOTT, TA
EDERER, DL
机构
[1] TULANE UNIV,DEPT PHYS,NEW ORLEANS,LA 70118
[2] UNIV TENNESSEE,DEPT PHYS,KNOXVILLE,TN 37996
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1994年 / 12卷 / 04期
关键词
D O I
10.1116/1.579288
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We have looked at beta-SiC with soft x-ray emission and photoemission spectroscopy. From the Si L23 and C K emissions, the Si s + d-like and C p partial density of states in the bulk valence band are identified and compared with valence band photoemission. In addition to bulk electronic structural features, photoemission from a (3 X 2) Si-rich surface shows two surface-derived valence features at approximately - 2.6 and approximately - 1.6 eV relative to the Fermi level. The intensities of these valence features vary as those of surface Si 2p core level components shifted by - 0.5 and - 1.4 eV from the bulklike SiC Si 2p core level. We have also used the Si L23 absorption edge as a probe of the unfilled states near the conduction band minimum.
引用
收藏
页码:1079 / 1084
页数:6
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