PARTIAL DENSITY OF UNOCCUPIED STATES AND L2,3-X-RAY ABSORPTION-SPECTRUM OF BULK SILICON AND OF THE SI(111) 2X1 SURFACE

被引：20

作者：

BIANCONI, A

DELSOLE, R

SELLONI, A

CHIARADIA, P

FANFONI, M

DAVOLI, I

机构：

[1] UNIV ROMA TOR VERGATA,DIPARTIMENTO FIS,I-00173 ROMA,ITALY

[2] CNR,IST STRUTTURA MAT,I-00044 FRASCATI,ITALY

[3] UNIV CAMERINO,DIPARTIMENTO MATEMAT FIS,I-62032 CAMERINO,ITALY

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 64卷 / 10期

关键词：

BULK SILICON - CONDUCTION BAND - DENSITY OF STATES - PARTIAL DENSITY - SURFACE ABSORPTION SPECTRUM - UNOCCUPIED STATES;

D O I：

10.1016/0038-1098(87)90632-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1313 / 1316

页数：4

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