GROWTH AND CHARACTERIZATION OF INP EPILAYERS ON ZNSE-COATED SI SUBSTRATES BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY

被引：6

作者：

LEE, MK

WUU, DS

TUNG, HH

CHANG, JH

LIN, YF

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 02期

关键词：

D O I：

10.1063/1.100383

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：107 / 109

页数：3

共 15 条

[1]

AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9

[2] ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J].

ASAI, H ;

OE, K .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2052-2056

[3] PRECISION LATTICE CONSTANT DETERMINATION [J].

BOND, WL .

ACTA CRYSTALLOGRAPHICA, 1960, 13 (10) :814-818

[4] GROWTH OF HIGH-QUALITY GAAS-LAYERS DIRECTLY ON SI SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].

CHONG, TC ;

FONSTAD, CG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03) :815-818

[5] MONOLITHIC INTEGRATION OF GAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS AND N-METAL-OXIDE-SEMICONDUCTOR SILICON CIRCUITS [J].

FISCHER, R ;

HENDERSON, T ;

KLEM, J ;

KOPP, W ;

PENG, CK ;

MORKOC, H ;

DETRY, J ;

BLACKSTONE, SC .

APPLIED PHYSICS LETTERS, 1985, 47 (09) :983-985

[6]

ISHIDA K, 1986, JPN J APPL PHYS 2, V25, pL288, DOI 10.1143/JJAP.25.L288

[7]

Lee Mal-Soon, UNPUB

[8] LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY OF INP USING A TRIMETHYLINDIUM-TRIMETHYLPHOSPHINE ADDUCT SOURCE [J].

LEE, MK ;

WUU, DS ;

TUNG, HH .

APPLIED PHYSICS LETTERS, 1987, 50 (25) :1805-1807

[9] HETEROEPITAXIAL GROWTH OF INP DIRECTLY ON SI BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

LEE, MK ;

WUU, DS ;

TUNG, HH .

APPLIED PHYSICS LETTERS, 1987, 50 (24) :1725-1726

[10] A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY [J].

LEYS, MR ;

VEENVLIET, H .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :145-153

← 1 2 →