THERMAL-RESISTANCE OF LIGHT-EMITTING-DIODES

被引：26

作者：

NAKWASKI, W ^{[1
]}

KONTKIEWICZ, AM ^{[1
]}

机构：

[1] CEMI, UNITRA, INST ELECTRON TECHNOL, PL-02668 WARSZAWA, POLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 11期

关键词：

D O I：

10.1109/T-ED.1985.22271

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2282 / 2291

页数：10

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[8] PROPERTIES OF GALLIUM ARSENIDE DIODES BETWEEN 4.2 DEGREES AND 300 DEGREES K [J].

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[9] THERMAL CHARACTERISTICS OF GAAS LASER JUNCTIONS UNDER HIGH POWER PULSED CONDITIONS [J].

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