INTERNAL-FRICTION OF SUBNANOMETER A-SIO2 FILMS

被引：82

作者：

WHITE, BE

POHL, RO

机构：

[1] Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.75.4437

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In order to determine whether strong interactions between defects are responsible for the spectral distribution of the low energy excitations that are believed to exist in all amorphous solids, we have measured the low temperature internal friction of thin alpha-SiO2 films with thicknesses ranging from 0.75 to 1000 nm. The internal friction of these films is found to be identical to that of bulk alpha-SiO2. From this it is concluded that interactions, if significant at all, are limited to distances less than 0.75 nm.

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页码：4437 / 4439

页数：3

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