AN EXACTLY SOLVABLE MODEL FOR CALCULATING CRITICAL MISFIT AND THICKNESS IN EPITAXIAL SUPERLATTICES - LAYERS OF EQUAL ELASTIC-CONSTANTS AND THICKNESSES

被引:92
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VANDERMERWE, JH
JESSER, WA
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10.1063/1.339934
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O59 [应用物理学];
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页码:1509 / 1517
页数:9
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  • [1] ABRAMOWITZ M, 1968, HDB MATH FUNCTIONS, P259
  • [2] [Anonymous], 1928, B SOC FRAN MINER CRI
  • [3] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
    BEAN, JC
    FELDMAN, LC
    FIORY, AT
    NAKAHARA, S
    ROBINSON, IK
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440
  • [4] FANTNER EJ, 1984, ADV XRAY ANAL, V27, P171
  • [5] ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH
    FRANK, FC
    VANDERMERWE, JH
    [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053): : 216 - 225
  • [6] ONE-DIMENSIONAL DISLOCATIONS .1. STATIC THEORY
    FRANK, FC
    VANDERMERWE, JH
    [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053): : 205 - 216
  • [7] Frenkel J., 1938, PHYS Z SOWJETUNION, V13, P1
  • [8] ON THEORY OF INTERFACIAL ENERGY AND ELASTIC STRAIN OF EPITAXIAL OVERGROWTHS IN PARALLEL ALIGNMENT ON SINGLE CRYSTAL SUBSTRATES
    JESSER, WA
    KUHLMANN.D
    [J]. PHYSICA STATUS SOLIDI, 1967, 19 (01): : 95 - &
  • [9] SILICON STRAINED LAYERS GROWN ON GAP(001) BY MOLECULAR-BEAM EPITAXY
    MAREE, PMJ
    OLTHOF, RIJ
    FRENKEN, JWM
    VANDERVEEN, JF
    BULLELIEUWMA, CWT
    VIEGERS, MPA
    ZALM, PC
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) : 3097 - 3103
  • [10] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2