TUNNELING AND RELAXATION OF PHOTOGENERATED CARRIERS IN NEAR-SURFACE QUANTUM-WELLS

被引：11

作者：

EMILIANI, V

BONANNI, B

FROVA, A

CAPIZZI, M

MARTELLI, F

STONE, SS

机构：

[1] FDN UGO BORDONI,I-00142 ROME,ITALY

[2] UNIV CALIF SANTA BARBARA,CTR QUEST,SANTA BARBARA,CA 93106

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 11期

关键词：

D O I：

10.1063/1.359214

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that photoluminescence emission from AlGaAs/GaAs and InGaAs/GaAs near-surface quantum wells can be a nonlinear function of the excitation-power density depending on the surface-barrier thickness and on the conditions of the barrier-oxide interface. By studying the rate-equation system, it is shown that this nonlinear effect is mainly due to the competition between tunneling to surface states and relaxation of photogenerated carriers within the quantum well. The information about surface states that one can obtain from this nonlinear behavior is also discussed. © 1995 American Institute of Physics.

引用

页码：5712 / 5717

页数：6

共 16 条

[11] Emiliani V., Presilla C., Frova A.
[12] Bonanni B., Capizzi M., Dioletta R., Emiliani V., Frova A., Presilla C., Colocci M., Gurioli M., Vinattieri A., Martelli F., Chang Y.-L., Merz J.L., Stone S.-S., Proceeding of the XXII International Conference on The Physics of Semiconductors, (1994)
[13] Bonanni B., Dioletta R., Capizzi M., Emiliani V., Frova A., Stone S.-S.
[14] Strobel R., Eccleston R., Kuhl J., Kohler K., Phys. Rev. B, 43, pp. 12-564, (1991)
[15] All the data on this set of samples have been published earlier, Refs. 2 and 6
[16] Presilla C.

← 1 2 →