OPTICAL-ABSORPTION TAIL IN INP-MN FROM SURFACE PHOTOVOLTAGE MEASUREMENTS

被引：5

作者：

CHIANG, CL ^{[1
]}

WAGNER, S ^{[1
]}

BALLMAN, AA ^{[1
]}

机构：

[1] BELL TEL LABS INC,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 12期

关键词：

D O I：

10.1063/1.94245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1113 / 1115

页数：3

相关论文

共 17 条

[1] Ballman A. A., 1982, Materials Letters, V1, P14, DOI 10.1016/0167-577X(82)90031-3
[2] OPTICAL-PROPERTIES OF IN1-XGAXP1-YASY, INP, GAAS, AND GAP DETERMINED BY ELLIPSOMETRY
BURKHARD, H
DINGES, HW
KUPHAL, E
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 655 - 662
[3] INFRARED DIELECTRIC CONSTANT AND ULTRAVIOLET OPTICAL PROPERTIES OF SOLIDS WITH DIAMOND ZINC BLENDE WURTZITE AND ROCKSALT STRUCTURE
CARDONA, M
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (07) : 2181 - &
[4] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS
CASEY, HC
STERN, F
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643
[5] Chiang C.-L., 1983, Materials Letters, V1, P145, DOI 10.1016/0167-577X(83)90004-6
[6] EFFECT OF REABSORBED RADIATION ON MINORITY-CARRIER DIFFUSION LENGTH IN GAAS
ETTENBERG, M
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (04) : 207 - 210
[7] METHOD FOR MEASUREMENT OF SHORT MINORITY CARRIER DIFFUSION LENGTHS IN SEMICONDUCTORS
GOODMAN, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (12) : 2550 - &
[8] GOODMAN AM, 1980, 1980 INT EL DEV M WA, P231
[9] ELECTRON-DIFFUSION LENGTHS IN PARA-TYPE INP INVOLVED IN INDIUM TIN OXIDE PARA-INP SOLAR-CELLS
GOUSKOV, L
LUQUET, H
SOONCKINDT, L
OEMRY, A
BOUSTANI, M
NGUYEN, PH
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 7014 - 7019
[10] METALLOGRAPHIC DEVELOPMENT OF CRYSTAL DEFECTS IN INP
HUBER, A
LINH, NT
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 29 (01) : 80 - 84