SUPERCONDUCTOR-BASE HOT-ELECTRON TRANSISTOR .1. THEORY AND DESIGN

被引：18

作者：

TONOUCHI, M

SAKAI, H

KOBAYASHI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 05期

关键词：

D O I：

10.1143/JJAP.25.705

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：705 / 710

页数：6

共 15 条

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