QUANTUM EFFICIENCIES EXCEEDING UNITY DUE TO IMPACT IONIZATION IN SILICON SOLAR-CELLS

被引:247
作者
KOLODINSKI, S [1 ]
WERNER, JH [1 ]
WITTCHEN, T [1 ]
QUEISSER, HJ [1 ]
机构
[1] PHYS TECHN BUNDESANSTALT,D-38116 BRAUNSCHWEIG,GERMANY
关键词
D O I
10.1063/1.110489
中图分类号
O59 [应用物理学];
学科分类号
摘要
Absolute measurements demonstrate internal quantum efficiencies in silicon solar cells to exceed unity for photon energies above the first direct band gap and to show distinct spectral features that correspond to specific points in the Brillouin zone. Ultraviolet radiation can generate hot carriers with sufficient energy to cause impact ionization which results in two electron hole pairs per incident photon.
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页码:2405 / 2407
页数:3
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