IMPURITY PHOTOVOLTAIC EFFECT IN SILICON

[1] RECOMBINATION PROPERTIES OF GOLD IN SILICON [J]. PHYSICAL REVIEW, 1958, 111 (06): : 1515 - 1518

[2] BERKOVSKII FM, 1962, FIZ TVERD TELA, V4, P366

[3] RECOMBINATION MECHANISMS [J]. PHYSICA STATUS SOLIDI, 1968, 29 (01): : 9 - +

[4] DEXTER DL, 1958, SOLID STATE PHYS, V6, P353

[5] ION IMPLANTATION IN SEMICONDUCTORS .I. RANGE DISTRIBUTION THEORY AND EXPERIMENTS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03): : 295 - +

[6] PHOTOVOLTAIC EFFECTS IN CDS CRYSTALS [J]. PHYSICAL REVIEW, 1960, 117 (06): : 1482 - 1486

[7] CASCADE CAPTURE OF ELECTRONS IN SOLIDS [J]. PHYSICAL REVIEW, 1960, 119 (05): : 1502 - 1523

[8] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (09) : 299 - 302

[9] AUGER RECOMBINATION OF EXCITONS BOUND TO NEUTRAL DONORS IN GALLIUM PHOSPHIDE AND SILICON [J]. PHYSICAL REVIEW LETTERS, 1966, 17 (25) : 1262 - &

[10] RUPPEL W, 1965, FESTKORPERPROBLEME, V4, P85

[1] RECOMBINATION PROPERTIES OF GOLD IN SILICON [J]. PHYSICAL REVIEW, 1958, 111 (06): : 1515 - 1518

[2] BERKOVSKII FM, 1962, FIZ TVERD TELA, V4, P366

[3] RECOMBINATION MECHANISMS [J]. PHYSICA STATUS SOLIDI, 1968, 29 (01): : 9 - +

[4] DEXTER DL, 1958, SOLID STATE PHYS, V6, P353

[5] ION IMPLANTATION IN SEMICONDUCTORS .I. RANGE DISTRIBUTION THEORY AND EXPERIMENTS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03): : 295 - +

[6] PHOTOVOLTAIC EFFECTS IN CDS CRYSTALS [J]. PHYSICAL REVIEW, 1960, 117 (06): : 1482 - 1486

[7] CASCADE CAPTURE OF ELECTRONS IN SOLIDS [J]. PHYSICAL REVIEW, 1960, 119 (05): : 1502 - 1523

[8] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (09) : 299 - 302

[9] AUGER RECOMBINATION OF EXCITONS BOUND TO NEUTRAL DONORS IN GALLIUM PHOSPHIDE AND SILICON [J]. PHYSICAL REVIEW LETTERS, 1966, 17 (25) : 1262 - &

[10] RUPPEL W, 1965, FESTKORPERPROBLEME, V4, P85