A 10-S DOPING TECHNOLOGY FOR THE APPLICATION OF LOW-TEMPERATURE POLYSILICON TFTS TO GIANT MICROELECTRONICS

被引：26

作者：

MIMURA, A ^{[1
]}

KAWACHI, G ^{[1
]}

AOYAMA, T ^{[1
]}

SUZUKI, T ^{[1
]}

NAGAE, Y ^{[1
]}

KONISHI, N ^{[1
]}

MOCHIZUKI, Y ^{[1
]}

机构：

[1] GIANT ELECTR TECHNOL CORP,RES LAB 2,CHUO KU,TOKYO 103,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 03期

关键词：

D O I：

10.1109/16.199356

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A bucket-type high-density (0.25-1.2 mA/cm2) low-energy (500-2000 V) ion source was utilized for high-speed phosphorus doping directly into a thin polysilicon layer without cap SiO2. Doping gas with He dilution was selected to reduce etching of polysilicon film. Excimer laser (XeCl, 8 mm x 8 mm) pulse annealing was introduced to activate effectively the doped impurity. The combination of these techniques provided a practically low sheet resistance for the TFT source, drain, and gate with a short time doping. The low-temperature polysilicon TFT fabricated with a doping time of 10 s had the comparable characteristics as that fabricated by a longer time doping or conventional ion implantation, showing the practicality of this technology and its promise for giant microelectronics.

引用

页码：513 / 520

页数：8

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