VERY HIGH-PURITY INP LAYERS GROWN BY ADDUCT-MOVPE

被引：7

作者：

WOLFRAM, P ^{[1
]}

REIER, FW ^{[1
]}

FRANKE, D ^{[1
]}

SCHUMANN, H ^{[1
]}

机构：

[1] TECH UNIV BERLIN,INST ANORGAN & ANALYT CHEM,D-1000 BERLIN 12,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 96卷 / 03期

关键词：

D O I：

10.1016/0022-0248(89)90069-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：691 / 692

页数：2

共 8 条

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[5] ME3IN PREPARATION AND ZONE-REFINING OF ADDUCTS FOR HIGH-QUALITY INP AND GAINAS MOVPE [J].

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[6] A NEW APPROACH TO MOCVD OF INDIUM-PHOSPHIDE AND GALLIUM-INDIUM ARSENIDE [J].

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EVANS, JS .

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[7] CHARACTERIZATION OF MOCVD INP GROWN FROM DIFFERENT ADDUCT SOURCES [J].

NICHOLAS, DJ ;

ALLSOPP, D ;

HAMILTON, B ;

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JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :326-333

[8]

RIER FW, 1986, J CRYST GROWTH, V77, P23

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