CHARACTERIZATION OF MOCVD INP GROWN FROM DIFFERENT ADDUCT SOURCES

被引：15

作者：

NICHOLAS, DJ ^{[1
]}

ALLSOPP, D ^{[1
]}

HAMILTON, B ^{[1
]}

PEAKER, AR ^{[1
]}

BASS, SJ ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 68卷 / 01期

关键词：

D O I：

10.1016/0022-0248(84)90433-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：326 / 333

页数：8

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