EMISSION AND CAPTURE MEASUREMENTS ON DEEP LEVELS IN INP

被引：8

作者：

TAPSTER, PR

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1983年 / 16卷 / 21期

关键词：

D O I：

10.1088/0022-3719/16/21/018

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：4173 / 4180

页数：8

共 17 条

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KAWAMURA, Y ;

IKEDA, M ;

OKAMOTO, H .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :2852-2859

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GUHA, S ;

HASEGAWA, F .

SOLID-STATE ELECTRONICS, 1977, 20 (01) :27-28

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[6] DEEP TRAPS IN GAAS UNDER HYDROSTATIC-PRESSURE [J].

KUMAGAI, O ;

WUNSTEL, K ;

JANTSCH, W .

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[7] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

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[8] COMPLEX NATURE OF GOLD-RELATED DEEP LEVELS IN SILICON [J].

LANG, DV ;

GRIMMEISS, HG ;

MEIJER, E ;

JAROS, M .

PHYSICAL REVIEW B, 1980, 22 (08) :3917-3934

[9] DEEP LEVEL TRANSIENT SPECTROSCOPY STUDY IN N-TYPE INP [J].

LIM, H ;

SAGNES, G ;

BASTIDE, G ;

ROUZEYRE, M .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3317-3320

[10] A STUDY OF DEEP LEVEL IN BULK NORMAL-INP BY TRANSIENT SPECTROSCOPY [J].

MCAFEE, SR ;

CAPASSO, F ;

LANG, DV ;

HUTCHINSON, A ;

BONNER, WA .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) :6158-6164

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