EXPERIMENTAL INVESTIGATION OF THE AMORPHOUS-SILICON MELTING TEMPERATURE BY FAST HEATING PROCESSES

被引：14

作者：

BAERI, P

CAMPISANO, SU

GRIMALDI, MG

RIMINI, E

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 12期

关键词：

D O I：

10.1063/1.330472

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：8730 / 8733

页数：4

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共 9 条

[1] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS
BAERI, P
CAMPISANO, SU
FOTI, G
RIMINI, E
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797
[2] PHASE-TRANSITIONS IN AMORPHOUS SI PRODUCED BY RAPID HEATING
BAERI, P
FOTI, G
POATE, JM
CULLIS, AG
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (25) : 2036 - 2039
[3] MEASUREMENT OF THE VELOCITY OF THE CRYSTAL-LIQUID INTERFACE IN PULSED LASER ANNEALING OF SI
GALVIN, GJ
THOMPSON, MO
MAYER, JW
HAMMOND, RB
PAULTER, N
PEERCY, PS
[J]. PHYSICAL REVIEW LETTERS, 1982, 48 (01) : 33 - 36
[4] MAYER JW, 1982, LASER ELECTRON BEAM
[5] MERLI PG, 1981, OPTIK, V58, P201
[6] SIREGAR MRT, 1979, HELV PHYS ACTA, V52, P45
[7] SMITH RA, 1978, SEMICONDUCTORS+, P321
[8] SPAEPEN F, 1982, LASER ELECTRON BEAM, pCH4
[9] 1961, GOLDSMITH HDB THERMO