A MODEL FOR THE ORIGIN OF THE OSCILLATORY STRUCTURE IN THE REVERSE BIAS J(V) CHARACTERISTICS OF N+GAAS/(ALGA)AS/N-GAAS/N+GAAS TUNNELLING DEVICES

被引：13

作者：

EAVES, L ^{[1
]}

GUIMARAES, PSS ^{[1
]}

SHEARD, FW ^{[1
]}

SNELL, BR ^{[1
]}

TAYLOR, DC ^{[1
]}

TOOMBS, GA ^{[1
]}

SINGER, KE ^{[1
]}

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,MANCHESTER M60 1QD,LANCS,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1985年 / 18卷 / 27期

关键词：

D O I：

10.1088/0022-3719/18/27/008

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L885 / L889

页数：5

共 10 条

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[2] CHROBOCZEK JA, 1985, 17TH P INT C PHYS SE, P697
[3] FREQUENCY-DEPENDENCE OF HOPPING CONDUCTIVITY IN N-GAAS
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MITTER, H
PORTAL, JC
HILL, G
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (13): : L345 - L348
[4] EAVES L, 1985, PHYS REV LETT, V53, P262
[5] TUNNELLING AND MAGNETO-TUNNELLING EFFECTS IN N+GAAS/(ALGA)AS/N-GAAS-N+GAAS DEVICES
GUIMARAES, PSS
TAYLOR, DC
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[6] SEQUENTIAL SINGLE-PHONON EMISSION IN GAAS-ALXGA1-XAS TUNNEL-JUNCTIONS
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[7] NEGATIVE CHARGE, BARRIER HEIGHTS, AND THE CONDUCTION-BAND DISCONTINUITY IN ALXGA1-XAS CAPACITORS
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FISCHER, R
MORKOC, H
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2844 - 2853
[8] HICKMOTT TW, 1985, 17TH P INT C PHYS SE, P417
[9] IMPURITY CONDUCTION AND MAGNETORESISTANCE IN LIGHTLY DOPED N-TYPE GAAS
KAHLERT, H
LANDWEHR, G
SCHLACHETZKI, A
SALOW, H
[J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1976, 24 (04): : 361 - 365
[10] ORIGIN OF THE CURRENT OSCILLATIONS IN GAAS-ALGAAS TUNNEL-JUNCTIONS
LEBURTON, JP
[J]. PHYSICAL REVIEW B, 1985, 31 (06): : 4080 - 4082