MICROSCOPIC STRUCTURE, DISCOMMENSURATIONS, AND TILING OF SI(111)/CU-5X5

被引：68

作者：

ZEGENHAGEN, J ^{[1
]}

FONTES, E ^{[1
]}

GREY, F ^{[1
]}

PATEL, JR ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.46.1860

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We derive a detailed, microscopic description of the Si(111)/Cu-"5 x 5" reconstruction. The key to understanding this structure is the x-ray standing-wave determination of the Cu registry with respect to the Si substrate. With Cu basically in H-3 and substitutional sites the buckled Si(111) surface bilayer converts to an almost planar, hexagonal CU2Si layer. The straightened bond angles and the associated increase in the lateral lattice constant give rise to a hexagonal network of discommensurations of period almost-equal-to 5.5a(Si). Complete tiling of the surface requires three types of twisted (+/-3-degrees) domains, two of which are rotationally equivalent.

引用

页码：1860 / 1863

页数：4

共 17 条

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