INVERTED THERMAL-CONVERSION - GAAS, A NEW ALTERNATIVE MATERIAL FOR INTEGRATED-CIRCUITS

被引：79

作者：

LAGOWSKI, J

GATOS, HC

KANG, CH

SKOWRONSKI, M

KO, KY

LIN, DG

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 14期

关键词：

D O I：

10.1063/1.97527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：892 / 894

页数：3

共 10 条

[1]

Blakemore J. S., 1982, J APPL PHYS, V52, p123(R)

[2] STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

HOLMES, DE ;

CHEN, RT ;

ELLIOTT, KR ;

KIRKPATRICK, CG .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :46-48

[3] IDENTIFICATION OF THE 0.82-EV ELECTRON TRAP, EL2 IN GAAS, AS AN ISOLATED ANTISITE ARSENIC DEFECT [J].

KAMINSKA, M ;

SKOWRONSKI, M ;

KUSZKO, W .

PHYSICAL REVIEW LETTERS, 1985, 55 (20) :2204-2207

[4]

Kang C., UNPUB

[5] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J].

LAGOWSKI, J ;

GATOS, HC ;

PARSEY, JM ;

WADA, K ;

KAMINSKA, M ;

WALUKIEWICZ, W .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :342-344

[6]

Makram-Ebeid S., 1984, Semi-Insulating III-V materials, P184

[7] COMPENSATION MECHANISMS IN GAAS [J].

MARTIN, GM ;

FARGES, JP ;

JACOB, G ;

HALLAIS, JP ;

POIBLAUD, G .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2840-2852

[8]

PARSEY JM, 1981, J ELECTROCHEM SOC, V129, P388

[9] OPTICAL AND TRANSIENT CAPACITANCE STUDY OF EL2 IN THE ABSENCE AND PRESENCE OF OTHER MIDGAP LEVELS [J].

SKOWRONSKI, M ;

LAGOWSKI, J ;

GATOS, HC .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (07) :2451-2456

[10] EFFECTS OF STOICHIOMETRY ON THERMAL-STABILITY OF UNDOPED, SEMI-INSULATING GAAS [J].

TA, LB ;

HOBGOOD, HM ;

ROHATGI, A ;

THOMAS, RN .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5771-5775

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