HOLE SPIN RELAXATION IN N-MODULATION DOPED QUANTUM-WELLS

被引：52

作者：

BAYLAC, B ^{[1
]}

AMAND, T ^{[1
]}

MARIE, X ^{[1
]}

DAREYS, B ^{[1
]}

BROUSSEAU, M ^{[1
]}

BACQUET, G ^{[1
]}

THIERRYMIEG, V ^{[1
]}

机构：

[1] MICROSTRUCT & MICROELECTR LAB L2M,CNRS,F-92225 BAGNEUX,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 93卷 / 01期

关键词：

QUANTUM WELLS; SEMICONDUCTORS; SPIN DYNAMICS;

D O I：

10.1016/0038-1098(94)00721-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The hole spin relaxation in n-modulation doped quantum wells has been investigated as a function of the laser excitation energy and excitation intensity. We demonstrate for the first time that the heavy hole spin flip time is a very strong decreasing function of these two parameters. We present a simple interpretation which assigns these dependences to the carriers temperature variation.

引用

页码：57 / 60

页数：4