EXCITONIC RECOMBINATION IN GAN GROWN BY MOLECULAR-BEAM EPITAXY

被引：75

作者：

SMITH, M

CHEN, GD

LI, JZ

LIN, JY

JIANG, HX

SALVADOR, A

KIM, WK

AKTAS, O

BOTCHKAREV, A

MORKOC, H

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[3] XIAN JIAOTONG UNIV,DEPT APPL PHYS,XIAN 710049,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 23期

关键词：

D O I：

10.1063/1.114902

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Time-resolved photoluminescence has been employed to probe the free-excitonic transitions and their dynamic processes in GaN grown by molecular beam epitaxy (MBE). The exciton photoluminescence spectral line shape, quantum yield, and recombination lifetimes have been measured at different excitation intensities and temperatures, from which the binding energy of an exciton, the energy band gap, and the free-exciton radiative recombination lifetimes of GaN grown by MBE have been obtained. Our results have demonstrated the superior crystalline quality as well as ultrahigh purity of the investigated sample, implying a new major breakthrough in MBE growth technologies for GaN. (C) 1995 American Institute of Physics.

引用

页码：3387 / 3389

页数：3