EXPERIMENTAL CHARACTERIZATION OF A NEGATIVE-RESISTANCE AVALANCHE DIODE

被引:8
作者
JOSENHANS, JG
MISAWA, T
机构
关键词
D O I
10.1109/T-ED.1966.15668
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:206 / +
页数:1
相关论文
共 5 条
[1]  
BELL TEL LAB INC M, URRAY HILL
[2]   AVALANCHE TRANSIT-TIME MICROWAVE OSCILLATORS AND AMPLIFIERS [J].
DELOACH, BC ;
JOHNSTON, RL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :181-&
[3]   GAAS AVALANCHE MICROWAVE OSCILLATORS [J].
IRVIN, JC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :208-+
[4]  
MISAWA T, 1966, IEEE T ELECTRON DEV, VED13, P143, DOI 10.1109/T-ED.1966.15648
[5]   A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE [J].
READ, WT .
BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (02) :401-446