DIELECTRIC-PROPERTIES OF NARROW-GAP SEMICONDUCTORS

被引：4

作者：

KUMAZAKI, K

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)91059-Y

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The complex dielectric constants in narrow-gap semiconductors, CdxHg1xSe and ZnxHg1xSe, are measured by ellipsometer at room temperature between 1.8 and 5.5 eV. From these measurements, the composition dependence of the critical point energies. E1 and E1+Δ1, and spin-orbit splitting, Δ1, are obtained. The results obtained are discussed together with other mixed compounds. The broadening parameter of critical point energies for both materials due to alloy effects is also discussed. © 1989.

引用

页码：687 / 690

页数：4

共 19 条

[1] RAMAN-SCATTERING IN HG0.8CD0.2TE [J].

AMIRTHARAJ, PM ;

TIONG, KK ;

POLLAK, FH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1744-1748

[2]

BORISOV IN, 1971, SOV PHYS SEMICOND+, V5, P734

[3] OPTICAL PROPERTIES OF SILVER AND CUPROUS HALIDES [J].

CARDONA, M .

PHYSICAL REVIEW, 1963, 129 (01) :69-+

[4]

GAVALESHKO NP, 1978, 3RD P INT C PHYS NAR, P331

[5]

HAAS KC, 1983, PHYS REV B, V27, P1088

[6] MISCIBILITY GAP OF SYSTEM CDSE-HGSE [J].

KALB, A ;

LEUTE, V .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 5 (03) :K199-&

[7] POINT-DEFECTS AND NONSTOICHIOMETRY IN HGSE2 [J].

KUMAZAKI, K ;

MATSUSHIMA, E ;

ODAJIMA, A .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 37 (02) :579-589

[8] RESONANT RAMAN-SCATTERING NEAR E1+DELTA-1 IN CDXHG1-XSE [J].

KUMAZAKI, K .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1989, 151 (01) :353-362

[9] FAR INFRARED REFLECTION SPECTRA DUE TO LATTICE AND FREE CARRIER IN ZNXHG1-XSE [J].

KUMAZAKI, K ;

NISHIGUCHI, N .

SOLID STATE COMMUNICATIONS, 1986, 60 (03) :301-304

[10]

KUMAZAKI K, 1988, SOLID STATE COMMUN, V68, P5961

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