RAMAN-SCATTERING IN HG0.8CD0.2TE

[1] ABSTREITER G, 1978, APPL PHYS, V16, P354

[2] ANDERSON PL, 1981, J VAC SCI TECHNOL, V21, P125

[3] Antcliffe GA, 1971, P INT C PHYS SEMIMET, P499

[4] A NEW EXPERIMENTAL-METHOD FOR THE DETERMINATION OF THE ONE PHONON DENSITY OF STATES IN GAAS [J]. SOLID STATE COMMUNICATIONS, 1982, 41 (07) : 557 - 560

[5] Ching L. Y., 1980, Journal of the Physical Society of Japan, V49, P951

[6] Dornhaus R, 1976, SPRINGER TRACTS MODE, V78, P1

[7] DIELECTRIC FUNCTION IN HGTE BETWEEN 8 AND 300 DEGREES K [J]. PHYSICAL REVIEW B, 1974, 9 (02): : 517 - 526

[8] Hayes W., 1978, SCATTERING LIGHT CRY

[9] KEPA H, 1982, PHYS SCRIPTA, V25, P807, DOI 10.1088/0031-8949/25/6A/040

[10] ELECTROLYTE ELECTROREFLECTANCE STUDY OF THE EFFECTS OF ANODIZATION AND OF CHEMOMECHANICAL POLISH ON HG1-XCDXTE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 157 - 160

[1] ABSTREITER G, 1978, APPL PHYS, V16, P354

[2] ANDERSON PL, 1981, J VAC SCI TECHNOL, V21, P125

[3] Antcliffe GA, 1971, P INT C PHYS SEMIMET, P499

[4] A NEW EXPERIMENTAL-METHOD FOR THE DETERMINATION OF THE ONE PHONON DENSITY OF STATES IN GAAS [J]. SOLID STATE COMMUNICATIONS, 1982, 41 (07) : 557 - 560

[5] Ching L. Y., 1980, Journal of the Physical Society of Japan, V49, P951

[6] Dornhaus R, 1976, SPRINGER TRACTS MODE, V78, P1

[7] DIELECTRIC FUNCTION IN HGTE BETWEEN 8 AND 300 DEGREES K [J]. PHYSICAL REVIEW B, 1974, 9 (02): : 517 - 526

[8] Hayes W., 1978, SCATTERING LIGHT CRY

[9] KEPA H, 1982, PHYS SCRIPTA, V25, P807, DOI 10.1088/0031-8949/25/6A/040

[10] ELECTROLYTE ELECTROREFLECTANCE STUDY OF THE EFFECTS OF ANODIZATION AND OF CHEMOMECHANICAL POLISH ON HG1-XCDXTE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 157 - 160