INFLUENCE OF SURFACE RECONSTRUCTION ON THE AS DESORPTION PROCESS FROM A (001) GAAS SURFACE EVALUATED BY IMPROVED HIGH-ENERGY ELECTRON-REFLECTIVITY MEASUREMENTS

被引：19

作者：

YAMAGUCHI, H

HORIKOSHI, Y

机构：

[1] NTT Basic Research Laboratories, Musashino-shi

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.44.5897

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electron-beam specular reflectivity in high-energy electron diffraction is evaluated quantitatively by measuring the reflected electron-beam current. Using this method, As desorption from a (001) GaAs surface is studied in detail. This desorption process is sensitive to the transition of surface reconstruction and the activation energy for this process changes according to the reconstruction transition.

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页码：5897 / 5900

页数：4

相关论文

共 9 条

[1] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J].

ARTHUR, JR .

SURFACE SCIENCE, 1974, 43 (02) :449-461

[2] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :2074-&

[3] CURRENT UNDERSTANDING AND APPLICATIONS OF THE RHEED INTENSITY OSCILLATION TECHNIQUE [J].

DOBSON, PJ ;

JOYCE, BA ;

NEAVE, JH ;

ZHANG, J .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :1-8

[4] COMPOSITION AND STRUCTURE OF DIFFERENTLY PREPARED GAAS(100) SURFACES STUDIED BY LEED AND AES [J].

DRATHEN, P ;

RANKE, W ;

JACOBI, K .

SURFACE SCIENCE, 1978, 77 (01) :L162-L166

[5] MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS [J].

HORIKOSHI, Y ;

KAWASHIMA, M ;

YAMAGUCHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1988, 27 (02) :169-179

[6] DYNAMIC EFFECTS IN RHEED FROM MBE GROWN GAAS(001) SURFACES [J].

LARSEN, PK ;

DOBSON, PJ ;

NEAVE, JH ;

JOYCE, BA ;

BOLGER, B ;

ZHANG, J .

SURFACE SCIENCE, 1986, 169 (01) :176-196

[7]

MONCH W, 1985, MOL BEAM EPITAXY HET

[8] DYNAMIC RHEED OBSERVATIONS OF THE MBE GROWTH OF GAAS - SUBSTRATE-TEMPERATURE AND BEAM AZIMUTH EFFECTS [J].

NEAVE, JH ;

JOYCE, BA ;

DOBSON, PJ .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (03) :179-184

[9] STRUCTURE OF GAAS(001) (2X4)-C(2X8) DETERMINED BY SCANNING TUNNELING MICROSCOPY [J].

PASHLEY, MD ;

HABERERN, KW ;

FRIDAY, W ;

WOODALL, JM ;

KIRCHNER, PD .

PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2176-2179