ORIENTATIONAL DEPENDENCE OF PHOTOELECTROCHEMICAL ETCHING IN N-GAAS

被引：1

作者：

CARRABBA, MM

NGUYEN, NM

RAUH, RD

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 01期

关键词：

D O I：

10.1149/1.2100424

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：260 / 261

页数：2

相关论文

共 5 条

[1]

COMFORT L, 1974, APPL PHYS LETT, V25, P208

[2] DETECTION OF STRUCTURAL DEFECTS IN GAAS BY ELECTROCHEMICAL ETCHING [J].

FAKTOR, MM ;

STEVENSON, JL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) :621-629

[3] MICROPHOTOELECTROCHEMICAL ETCHING OF N-GAAS USING A SCANNED FOCUSED LASER [J].

RAUH, RD ;

LELIEVRE, RA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) :2811-2812

[4] PROFILE AND GROOVE-DEPTH CONTROL IN GAAS DIFFRACTION GRATINGS FABRICATED BY PREFERENTIAL CHEMICAL ETCHING IN H2SO4-H2O2-H2O SYSTEM [J].

TSANG, WT ;

WANG, S .

APPLIED PHYSICS LETTERS, 1976, 28 (01) :44-46

[5]

WILLIAMS RE, 1984, GALLIUM ARSENIDE PRO, pCH5