See results using high energy ions

被引：30

作者：

Duzellier, S

Falguere, D

Mouliere, L

Ecoffet, R

Buisson, J

机构：

[1] CTR NATL ETUD SPATIALES,F-31055 TOULOUSE,FRANCE

[2] CENS,CEA,LETI,DEIN,F-91191 GIF SUR YVETTE,FRANCE

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1995年 / 42卷 / 06期

关键词：

D O I：

10.1109/23.488781

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEE data on SRAMs and DRAMs, obtained with low and high energy ions, are presented. The global response of these devices remained coherent using low or high energy beams (angle effects, pattern influences, multiple-bit error proportion...), but, discrepancies appeared, in some cases, in the threshold part of the sensitivity curves. These anomalies seem in relation with a track structure.

引用

页码：1797 / 1802

页数：6

共 11 条

[1]

BUISSON J, 1993, DEINSLA9360 REP

[2] SPACE RADIATION EVALUATION OF 16-MBIT DRAMS FOR MASS MEMORY APPLICATIONS [J].

CALVEL, P ;

LAMOTHE, P ;

BARILLOT, C ;

ECOFFET, R ;

DUZELLIER, S ;

STASSINOPOULOS, EG .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (06) :2267-2271

[3]

CRISWELL TL, 1987, IEEE T NUCL SCI, V34

[4]

DREUTE J, 1993, 2ND EUR C RADECS P, P479

[5]

DUZELLIER S, 1992, IEEE NSREC92 DATA WO

[6]

DUZELLIER S, 1993, IEEE NSREC93 DATA WO

[7]

FALGUERE D, 1991, 1ST EUR C RADECS P

[8]

PATIN Y, 1993, 2ND EUR C RADECS P, P517

[9]

STAPOR WJ, 1988, IEEE T NUCL SCI, V35

[10] APPLICABILITY OF LET TO SINGLE EVENTS IN MICROELECTRONIC STRUCTURES [J].

XAPSOS, MA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1992, 39 (06) :1613-1621

← 1 2 →