SPACE RADIATION EVALUATION OF 16-MBIT DRAMS FOR MASS MEMORY APPLICATIONS

被引：26

作者：

CALVEL, P

LAMOTHE, P

BARILLOT, C

ECOFFET, R

DUZELLIER, S

STASSINOPOULOS, EG

机构：

[1] CNES,F-31035 TOULOUSE,FRANCE

[2] CERT,DERTS,F-31035 TOULOUSE,FRANCE

[3] NASA,GODDARD SPACE FLIGHT CTR,GREENBELT,MD 20771

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 06期

关键词：

Random access storage;

D O I：

10.1109/23.340574

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents heavy ions, protons and total dose data results for 16 Mbit DRAMs from IBM and TEXAS INSTRUMENTS, including a 'built-in ECC' DRAM. Single Event Phenomena rate are calculated for low earth orbits.

引用

页码：2267 / 2271

页数：5