RELATIONSHIP BETWEEN CRYSTAL-STRUCTURE AND CHEMICAL-COMPOSITION OF PBTIO3 THIN-FILMS PREPARED BY SPUTTER-ASSISTED PLASMA CVD

被引：15

作者：

MIHARA, T

MOCHIZUKI, S

KIMURA, S

MAKABE, R

机构：

[1] Government Industrial Research Institute, Osaka, Ikeda, Osaka

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 6A期

关键词：

PBTIO3; THIN FILM; SPUTTERING; PLASMA; CVD;

D O I：

10.1143/JJAP.31.1872

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

PbTiO3 thin films were prepared by sputter-assisted plasma chemical vapor deposition (CVD) on Pt-coated glass substrates at a substrate temperature of 500-degrees-C. As the source materials, a Pb metal target, TiCl4 gas and O2 gas were used. The crystal structures of the films changed from a pyrochlore phase to a perovskite one, and to a PbO (red) one with increasing Pb/Ti atomic ratio.

引用

页码：1872 / 1873

页数：2

共 4 条

[1] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF PBTIO3 THIN-FILMS [J].

KWAK, BS ;

BOYD, EP ;

ERBIL, A .

APPLIED PHYSICS LETTERS, 1988, 53 (18) :1702-1704

[2] PREPARATION OF PBTIO3 THIN-FILMS BY SPUTTER ASSISTED PLASMA CHEMICAL VAPOR-DEPOSITION METHOD [J].

MOCHIZUKI, S ;

KIMURA, S ;

MAKABE, R .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 :15-17

[3] PREPARATION OF C-AXIS-ORIENTED PBTIO3 THIN-FILMS BY MOCVD UNDER REDUCED PRESSURE [J].

OKADA, M ;

TAKAI, S ;

AMEMIYA, M ;

TOMINAGA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (06) :1030-1034

[4] PREPARATION OF PBTIO3 FERROELECTRIC THIN-FILM BY RF SPUTTERING [J].

OKUYAMA, M ;

MATSUI, Y ;

NAKANO, H ;

NAKAGAWA, T ;

HAMAKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (08) :1633-1634

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