NONEQUILIBRIUM PHONONS IN AMORPHOUS-SILICON STUDIED BY PULSED RAMAN-SPECTROSCOPY

被引：36

作者：

SCHOLTEN, AJ

AKIMOV, AV

DIJKHUIS, JI

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

[2] UNIV UTRECHT,DEBYE RES INST,3508 TA UTRECHT,NETHERLANDS

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.47.13910

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The anti-Stokes Raman scattering of a-Si and a-Si:H is studied at T = 2 K for intense (approximately 1 mJ/mm2) pulsed optical excitation. it is found that high-energy phonons (hBARomega > 100 cm-1) emitted as a result of carrier relaxation possess a nonequilibrium energy distribution. A time-resolved study of the Raman signals reveals relaxation time constants for 480-cm-1 phonons as long as 10 ns. The effect of phonon localization is suggested as an explanation of the experimental results.

引用

页码：13910 / 13913

页数：4

共 17 条

[1]

Akimov A. V., 1991, Soviet Physics - JETP, V73, P742

[2] RAMAN-SCATTERING IN PURE AND HYDROGENATED AMORPHOUS-GERMANIUM AND SILICON [J].