PRESSURE-DEPENDENCE OF DEEP-LEVEL TRANSITIONS IN AGGASE2

被引：10

作者：

CHOI, IH

YU, PY

机构：

[1] LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720

[2] CHUNG ANG UNIV,DEPT PHYS,SEOUL,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 13期

关键词：

D O I：

10.1063/1.111815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polarized optical absorption in single crystals of AgGaSe2 has been measured as a function of hydrostatic pressure. Two polarized absorption peaks due to defects are reported. The pressure dependence of these peaks suggests that they are due to deep centers. These deep center absorption peaks merged into the fundamental absorption edge under high pressure.

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页码：1717 / 1719

页数：3

相关论文

共 15 条

[1] LINEAR AND NONLINEAR OPTICAL PROPERTIES OF SOME TERNARY SELENIDES [J].

BOYD, GD ;

STORZ, FG ;

MCFEE, JH ;

KASPER, HM .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1972, QE 8 (12) :900-+

[2] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876

[3] UNTERSUCHUNGEN UBER TERNARE CHALKOGENIDE .5. UBER EINIGE TERNARE CHALKOGENIDE MIT CHALKOPYRITSTRUKTUR [J].

HAHN, H ;

FRANK, G ;

KLINGLER, W ;

MEYER, AD ;

STORGER, G .

ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1953, 271 (3-4) :153-170

[4] FINE STRUCTURE IN THE OPTICAL ABSORPTION EDGE OF ANISOTROPIC CRYSTALS [J].

HOPFIELD, JJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) :97-107

[5] LUMINESCENCE CIRCULAR-POLARIZATION OF AGGASE2 ON EXCITATION OF CIRCULARLY POLARIZED-LIGHT [J].

HORINAKA, H ;

INADA, H ;

SAIJYO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (08) :1332-1336

[6] THEORY OF THE BAND-GAP ANOMALY IN ABC2 CHALCOPYRITE SEMICONDUCTORS [J].

JAFFE, JE ;

ZUNGER, A .

PHYSICAL REVIEW B, 1984, 29 (04) :1882-1906

[7] WAVE-FUNCTIONS AND OPTICAL CROSS-SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS [J].

JAROS, M .

PHYSICAL REVIEW B, 1977, 16 (08) :3694-3706

[8] PRESSURE-DEPENDENCE OF ENERGY-GAP IN SOME I-III-VI2 COMPOUND SEMICONDUCTORS [J].

JAYARAMAN, A ;

NARAYANAMURTI, V ;

KASPER, HM ;

CHIN, MA ;

MAINES, RG .

PHYSICAL REVIEW B, 1976, 14 (08) :3516-3519

[9] ULTRAHIGH PRESSURES [J].

JAYARAMAN, A .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1986, 57 (06) :1013-1031

[10] BAND-EDGE HYDROSTATIC DEFORMATION POTENTIALS IN III-V SEMICONDUCTORS [J].

NOLTE, DD ;

WALUKIEWICZ, W ;

HALLER, EE .

PHYSICAL REVIEW LETTERS, 1987, 59 (04) :501-504