BAND-EDGE HYDROSTATIC DEFORMATION POTENTIALS IN III-V SEMICONDUCTORS

被引：153

作者：

NOLTE, DD ^{[1
]}

WALUKIEWICZ, W ^{[1
]}

HALLER, EE ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,BERKELEY,CA 94720

来源：

关键词：

D O I：

10.1103/PhysRevLett.59.501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：501 / 504

页数：4

共 32 条

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