ENERGY BARRIERS AND INTERFACE STATES AT HETEROJUNCTIONS

被引：124

作者：

FLORES, F ^{[1
]}

TEJEDOR, C ^{[1
]}

机构：

[1] UNIV AUTONOMA MADRID,CSIC,INST FIS ESTADO SOLIDO,MADRID 34,SPAIN

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1979年 / 12卷 / 04期

关键词：

D O I：

10.1088/0022-3719/12/4/018

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper homopolar and heteropolar heterojunctions have been analysed. The energy band discontinuities at heteropolar heterojunctions have been obtained self-consistently by analysing the charge induced at the interface. The crucial point of the analysis is the flow of charge between both semiconductors as a function of the difference in energy between their charge neutrality levels. For homopolar heterojunctions interface relaxation is discussed and it appears to be a function of the state of occupation of the interface. The analysis gives a relaxation of 4% for the 111-GeGaAs interface.

引用

页码：731 / 749

页数：19

共 27 条

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