ABSORPTION-SPECTRA OF TI-DOPED GAAS

被引:17
作者
HENNEL, AM
BRANDT, CD
WU, YT
BRYSKIEWICZ, T
KO, KY
LAGOWSKI, J
GATOS, HC
机构
来源
PHYSICAL REVIEW B | 1986年 / 33卷 / 10期
关键词
D O I
10.1103/PhysRevB.33.7353
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:7353 / 7356
页数:4
相关论文
共 19 条
  • [1] Abragam A., 1970, ELECT PARAMAGNETIC R
  • [2] Allen J. W., 1980, Semi-Insulating III-V Materials, P261
  • [3] BEKMURATOV MF, 1973, SOV PHYS SEMICOND+, V7, P55
  • [4] IDENTIFICATION OF A VANADIUM-RELATED LEVEL IN LIQUID ENCAPSULATED CZOCHRALSKI-GROWN GAAS
    BRANDT, CD
    HENNEL, AM
    PAWLOWICZ, LM
    DABKOWSKI, FP
    LAGOWSKI, J
    GATOS, HC
    [J]. APPLIED PHYSICS LETTERS, 1985, 47 (06) : 607 - 609
  • [5] BRANDT CD, UNPUB APPL PHYS LETT
  • [6] Bryskiewicz T., 1980, Semiconductor optoelectronics, P187
  • [7] BRYSKIEWICZ T, PROGR CRYSTAL GROWTH
  • [8] TRANSITION-METAL IMPURITIES IN III-V COMPOUNDS
    CLERJAUD, B
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (19): : 3615 - 3661
  • [9] HENNEL AM, 1985, MATER RES SOC S P, V46, P353
  • [10] KORNILOV BV, 1974, SOV PHYS SEMICOND+, V8, P141