IDENTIFICATION OF A VANADIUM-RELATED LEVEL IN LIQUID ENCAPSULATED CZOCHRALSKI-GROWN GAAS

[1] A UNIVERSAL TREND IN THE BINDING-ENERGIES OF DEEP IMPURITIES IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (06) : 671 - 673

[2] Clerjaud B., 1984, Semi-Insulating III-V materials, P484

[3] HAISTY RW, 1964, 7TH P INT C PHYS SEM, P1161

[4] HENNEL AM, UNPUB

[5] SPECTROSCOPIC STUDY OF VANADIUM IN GAP AND GAAS [J]. PHYSICAL REVIEW B, 1982, 25 (09) : 5598 - 5606

[6] KAUFMANN U, 1983, ADV ELECTRON ELECTRO, V58, P81

[7] KAUFMANN U, 1982, LANDOLTBORNSTEIN N A, V17, P231

[8] KUTT W, 1984, APPL PHYS LETT, V44, P1078, DOI 10.1063/1.94650

[9] LITTY F, 1983, PHYSICA B & C, V117, P182, DOI 10.1016/0378-4363(83)90476-X

[10] A DOMINANT ELECTRICAL DEFECT IN GAAS [J]. SOLID STATE COMMUNICATIONS, 1982, 42 (10) : 745 - 748

[1] A UNIVERSAL TREND IN THE BINDING-ENERGIES OF DEEP IMPURITIES IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (06) : 671 - 673

[2] Clerjaud B., 1984, Semi-Insulating III-V materials, P484

[3] HAISTY RW, 1964, 7TH P INT C PHYS SEM, P1161

[4] HENNEL AM, UNPUB

[5] SPECTROSCOPIC STUDY OF VANADIUM IN GAP AND GAAS [J]. PHYSICAL REVIEW B, 1982, 25 (09) : 5598 - 5606

[6] KAUFMANN U, 1983, ADV ELECTRON ELECTRO, V58, P81

[7] KAUFMANN U, 1982, LANDOLTBORNSTEIN N A, V17, P231

[8] KUTT W, 1984, APPL PHYS LETT, V44, P1078, DOI 10.1063/1.94650

[9] LITTY F, 1983, PHYSICA B & C, V117, P182, DOI 10.1016/0378-4363(83)90476-X

[10] A DOMINANT ELECTRICAL DEFECT IN GAAS [J]. SOLID STATE COMMUNICATIONS, 1982, 42 (10) : 745 - 748