A DOMINANT ELECTRICAL DEFECT IN GAAS

被引：18

作者：

LOOK, DC ^{[1
]}

WALTERS, DC ^{[1
]}

MEYER, JR ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

关键词：

D O I：

10.1016/0038-1098(82)90652-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：745 / 748

页数：4

共 23 条

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[8] FAZZIO A, 1979, J PHYS C SOLID STATE, V12, P3469, DOI 10.1088/0022-3719/12/17/018
[9] LOCALIZED DEFECTS IN III-V SEMICONDUCTORS
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[10] LOCALIZED ELECTRON STATES ASSOCIATED WITH GA-VACANCY AND AS-VACANCY IN GAAS
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