A DOMINANT ELECTRICAL DEFECT IN GAAS

[11] IDENTIFICATION OF DEFECT STATE ASSOCIATED WITH A GALLIUM VACANCY IN GAAS AND ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1977, 15 (10) : 4874 - 4882

[12] LOOK DC, 1981, B AM PHYS SOC, V26, P222

[13] AUTOMATED, HIGH-RESISTIVITY HALL-EFFECT AND PHOTOELECTRONIC APPARATUS [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1981, 14 (04): : 472 - 477

[14] LOUIS E, UNPUB PHYS REV B

[15] Masterov V. F., 1976, SOV PHYS SEMICOND, V10, P496

[16] LOW-TEMPERATURE ELECTRON-TRANSPORT IN GAAS [J]. SOLID STATE COMMUNICATIONS, 1982, 41 (01) : 19 - 22

[17] PHASE-SHIFT CALCULATION OF IONIZED IMPURITY SCATTERING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5413 - 5427

[18] Milnes A.G, 1973, DEEP IMPURITIES SEMI, P54

[19] PONS D, 1979, I PHYS C SER, V46, P352

[20] PUTLEY EH, 1968, HALL EFFECT SEMICOND

[11] IDENTIFICATION OF DEFECT STATE ASSOCIATED WITH A GALLIUM VACANCY IN GAAS AND ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1977, 15 (10) : 4874 - 4882

[12] LOOK DC, 1981, B AM PHYS SOC, V26, P222

[13] AUTOMATED, HIGH-RESISTIVITY HALL-EFFECT AND PHOTOELECTRONIC APPARATUS [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1981, 14 (04): : 472 - 477

[14] LOUIS E, UNPUB PHYS REV B

[15] Masterov V. F., 1976, SOV PHYS SEMICOND, V10, P496

[16] LOW-TEMPERATURE ELECTRON-TRANSPORT IN GAAS [J]. SOLID STATE COMMUNICATIONS, 1982, 41 (01) : 19 - 22

[17] PHASE-SHIFT CALCULATION OF IONIZED IMPURITY SCATTERING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5413 - 5427

[18] Milnes A.G, 1973, DEEP IMPURITIES SEMI, P54

[19] PONS D, 1979, I PHYS C SER, V46, P352

[20] PUTLEY EH, 1968, HALL EFFECT SEMICOND