PHASE-SHIFT CALCULATION OF IONIZED IMPURITY SCATTERING IN SEMICONDUCTORS

被引：91

作者：

MEYER, JR

BARTOLI, FJ

机构：

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.23.5413

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5413 / 5427

页数：15

共 25 条

[1]

Abramowitz M., 1964, HDB MATH FUNCTIONS F, P437

[2]

BEER AC, 1963, GALVANOMAGNETIC EFFE, P112

BLANKENSHIP, JL .

BLATT, FJ .

PHYSICAL REVIEW, 1957, 105 (04) :1203-1205

[5] THEORY OF MOBILITY OF ELECTRONS IN SOLIDS [J].

BLATT, FJ .

SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 4 :199-363

[6] SCATTERING OF CARRIERS BY IONIZED IMPURITIES IN SEMICONDUCTORS [J].

BLATT, FJ .

BOARDMAN, AD ;

HENRY, DW .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 60 (02) :633-639

[8]

BROOKS H, 1951, PHYS REV, V83, P879

CSAVINSZKY, P .

PHYSICAL REVIEW, 1962, 126 (04) :1436-&

[10]

DAVYDOV AS, 1965, QUANTUM MECHANICS, P389