ELECTRON-IRRADIATION DEFECTS IN N-TYPE GAAS

被引：21

作者：

FARMER, JW

LOOK, DC

机构：

来源：

PHYSICAL REVIEW B | 1980年 / 21卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.21.3389

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3389 / 3398

页数：10

共 22 条

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GRAFT, RD .

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[3]

BREHM GE, 1974, J APPL PHYS, V43, P568

[4] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J].

CHIANG, SY ;

PEARSON, GL .

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[5] TYPE CONVERSION IN ELECTRON-IRRADIATED GAAS [J].

FARMER, JW ;

LOOK, DC .

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[6]

Kahan A., 1971, Radiation Effects, V9, P99, DOI 10.1080/00337577108242040

[7] ELECTRICAL PROPERTIES OF ELECTRON-IRRADIATED GAAS [J].

KALMA, AH ;

BERGER, RA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (06) :209-214

[8]

KIMERLING LC, 1975, 1974 INT C LATT DEF, P589

[9] INTRODUCTION AND ANNEALING OF DEFECTS IN N-TYPE GAAS FOLLOWING IRRADIATION WITH ELECTRONS AND GAMMA-RAYS [J].

KOLCHENKO, TI ;

LOMAKO, VM .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (1-2) :67-72

[10]

KOLCHENKO TI, 1975, SOV PHYS SEMICOND, V9, P1157

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