DEPENDENCE OF CRITICAL-CURRENT DENSITY ON OXYGEN EXPOSURE IN NB-ALOX-NB TUNNEL-JUNCTIONS

被引：51

作者：

KLEINSASSER, AW

MILLER, RE

MALLISON, WH

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1995年 / 5卷 / 01期

关键词：

D O I：

10.1109/77.384565

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate that a large fraction of the available data relating the critical current density J(c) of superconducting Nb-AlOx-Nb tunnel junctions to oxidation parameters can be accounted for by a single, nearly universal dependence, For fixed oxidation temperature, J(c) does not depend independently on oxygen partial pressure and oxidation time, but only on their product. There are two distinct regimes in this dependence, corresponding to high and low J(c).

引用

页码：26 / 30

页数：5

共 40 条

[1] FABRICATION OF Nb/AlOx/Nb TUNNEL JUNCTIONS USING FOCUSED ION BEAM IMPLANTED Nb PATTERNING (FINP) TECHNIQUE [J].