A COMPARISON OF SHALLOW AND DEEP IRON SILICIDE LAYERS FABRICATED BY ION-BEAM SYNTHESIS

被引：5

作者：

HUNT, TD ^{[1
]}

REESON, KJ ^{[1
]}

GWILLIAM, RM ^{[1
]}

HOMEWOOD, KP ^{[1
]}

WILSON, RJ ^{[1
]}

SEALY, BJ ^{[1
]}

MEEKISON, CD ^{[1
]}

BOOKER, GR ^{[1
]}

OBERSCHACHTSIEK, P ^{[1
]}

机构：

[1] NAT HIST MUSEUM,LONDON,ENGLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷

关键词：

D O I：

10.1016/0168-583X(93)90681-U

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Buried layers of alpha and beta iron disilicide have been fabricated by ion beam synthesis (IBS) in silicon (100) substrates. An implantation energy of 200 keV, to a dose of 4 x 10(17) ions cm-2 is compared with an energy of 2 MeV. to a dose of 1 x 10(18) ions cm-2. The effect of implantation energy and annealing conditions on the layer formation was studied by Rutherford backscattering spectroscopy, cross-sectional transmission electron microscopy, photoluminescence (PL) and sheet resistance measurements. A PL signal with a full width half maximum (FWHM) value of 4 meV was obtained after a 900-degrees-C anneal for 18 h.

引用

页码：781 / 785

页数：5

共 6 条

[1] SEMICONDUCTING SILICIDES AS POTENTIAL MATERIALS FOR ELECTROOPTIC VERY LARGE-SCALE INTEGRATED-CIRCUIT INTERCONNECTS [J].