S-CU-RELATED METASTABLE COMPLEX DEFECT IN SI BY OPTICAL-DETECTION OF MAGNETIC-RESONANCE

被引：4

作者：

CHEN, WM ^{[1
]}

SINGH, M ^{[1
]}

MONEMAR, B ^{[1
]}

HENRY, A ^{[1
]}

JANZEN, E ^{[1
]}

FRENS, AM ^{[1
]}

BENNEBROEK, MT ^{[1
]}

SCHMIDT, J ^{[1
]}

机构：

[1] LEIDEN UNIV,HUYGENS LAB,DEPT PHYS,2300 RA LEIDEN,NETHERLANDS

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.50.7365

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present experimental results obtained on a S-Cu-related metastable complex defect in Si, by optical detection of magnetic resonance (ODMR) at the X band and the K band. Two photoluminescence emissions arising from the bound-exciton (BE) recombination at the defect in two different configurations were monitored in the ODMR experiments. The spin-triplet nature of the lowest BE state for both BE's was confirmed. The symmetry of each configuration has been determined to be monoclinic-I and triclinic, respectively. The unusually broad ODMR linewidth is argued to originate from unresolved hyperfine interaction with a copper atom involved in the defect, at which the primary bound particle (i.e., the hole) of the BE is highly localized. The configurational metastability has been demonstrated in the ODMR experiments.

引用

页码：7365 / 7370

页数：6

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