MECHANISM OF THE CONFIGURATIONAL CHANGE OF METASTABLE DEFECTS IN SILICON

被引：12

作者：

CHEN, WM

SVENSSON, JH

JANZEN, E

MONEMAR, B

HENRY, A

FRENS, AM

BENNEBROEK, MT

SCHMIDT, J

机构：

[1] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN

[2] LEIDEN UNIV,HUYGENS LAB,DEPT PHYS,2300 RA LEIDEN,NETHERLANDS

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.71.416

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

From a detailed study of two different defects in silicon, excitonic Auger capture is shown to be an important mechanism of the configurational change of metastable defects. A free exciton interacts with the defect and recombines, transferring its energy to an electron, which will be emitted high up into the conduction band. This hot Auger electron will quickly reach the bottom of the conduction band. The liberated energy may excite the defect above the barrier between the two configurations.

引用

页码：416 / 419

页数：4

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