FORMATION CONDITIONS AND STRUCTURE OF GE FILMS DEPOSITED ON POLISHED 111 CAF2 SUBSTRATES INAN ULTRAHIGH-VACUUM SYSTEM

被引：57

作者：

SLOOPE, BW

TILLER, CO

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 10期

关键词：

D O I：

10.1063/1.1702946

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3174 / &

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