Enhanced stability of conducting poly(3-octylthiophene) thin films using organic nitrosyl compounds

Organic anion-nitrosyl compounds have been tested for the chemical doping of thin films of poly(3-octylthiophene) (P3OT). The use of a fluorinated anion with a high degree of dissociation, such as bis(trifluoromethanesulfonyl)imide (TFSI), appears to be effective: high conductivities are obtained, even for low doping levels (nearly five times lower than the levels required when using conventional dopants). Moreover, the TFSI anion generates a stable doping process spanning a wide range of conductivities. This represents a new result for the doping of poly(3-alkylthiophene) (P3AT) with an organic oxidant and compares favorably with AuCl4-, which, to date, has resulted in the best ambient stabilities for the conducting state of P3AT.