ALTERNATING SPACE-CHARGE-LIMITED CURRENTS IN HYDROGENATED AMORPHOUS-SILICON

被引:4
作者
DENBOER, W
POP, AFP
机构
关键词
D O I
10.1016/0038-1098(83)90327-7
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:881 / 884
页数:4
相关论文
共 10 条
[1]   EVIDENCE OF SPACE-CHARGE-LIMITED CURRENT IN AMORPHOUS-SILICON SCHOTTKY DIODES [J].
ASHOK, S ;
LESTER, A ;
FONASH, SJ .
ELECTRON DEVICE LETTERS, 1980, 1 (10) :200-202
[2]   SPACE-CHARGE LIMITED CONDUCTION IN N+NN+ AMORPHOUS HYDROGENATED SILICON FILMS [J].
BHATTACHARYA, E ;
GUHA, S ;
KRISHNA, KV ;
BAPAT, DR .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6285-6288
[3]   DETERMINATION OF MIDGAP DENSITY OF STATES IN A-SI-H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS [J].
DENBOER, W .
JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :451-454
[4]   ESTIMATION OF LOCALIZED STATE DISTRIBUTION PROFILES IN UNDOPED AND DOPED A-SI-H BY MEASURING SPACE-CHARGE-LIMITED CURRENT [J].
FURUKAWA, S ;
KAGAWA, T ;
MATSUMOTO, N .
SOLID STATE COMMUNICATIONS, 1982, 44 (06) :927-930
[5]  
HAN MK, 1981, ELECTRON DEVIC LETT, V2, P198
[6]  
KAO KC, 1981, ELECTRICAL TRANSPORT
[7]  
Lampert M.A., 1970, PHYS B, DOI DOI 10.1088/0031-9112/21/12/031/PDF
[8]  
MCKENZIE KD, 1982, PHILOS MAG, V46, P377
[9]   OPTICALLY INDUCED CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED HYDROGENATED AMORPHOUS-SILICON [J].
STAEBLER, DL ;
WRONSKI, CR .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3262-3268
[10]   A PHYSICAL INTERPRETATION OF DISPERSIVE TRANSPORT IN DISORDERED SEMICONDUCTORS [J].
TIEDJE, T ;
ROSE, A .
SOLID STATE COMMUNICATIONS, 1981, 37 (01) :49-52