CHARACTERIZATION OF SILICON-OXIDE FILMS DEPOSITED USING TETRAETHYLORTHOSILICATE

被引:5
作者
NORMANDIN, MS
EMESH, I
DASTI, G
DEWILTON, AC
PEARCE, N
机构
关键词
D O I
10.1139/p89-035
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:199 / 206
页数:8
相关论文
共 10 条
[1]  
ADAMS AC, 1986, PLASMA ASSISTED DEPO, P111
[2]  
CHIN BL, 1988, SOLID STATE TECHNOL, V31, P119
[3]   NONDESTRUCTIVE SURFACE-ANALYSIS BY NUCLEAR-SCATTERING TECHNIQUES [J].
GUJRATHI, SC ;
AUBRY, P ;
LEMAY, L ;
MARTIN, JP .
CANADIAN JOURNAL OF PHYSICS, 1987, 65 (08) :950-955
[4]  
KERN W, 1973, 11TH ANN P REL PHYS, P214
[5]   FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J].
LENZLINGER, M ;
SNOW, EH .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :278-+
[6]  
Murray C., 1986, Semiconductor International, V9, P60
[7]  
Reinberg A. R., 1973, US patent, Patent No. [3,757,733, 3757733]
[8]   PLASMA DEPOSITION OF INORGANIC SILICON CONTAINING FILMS [J].
REINBERG, AR .
JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) :345-375
[9]  
SANTORO CJ, 1971, P IEEE, V59
[10]   HAZARD POTENTIAL OF DICHLOROSILANE [J].
SHARP, KG ;
ARVIDSON, A ;
ELVEY, TC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) :2346-2349